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Content DescriptionIEC TR 62878-2-8:2021(E) describes a warpage control of active device embedded substrate along with parameters for determining warpage, which are useful during package assembly. Warpage results are explained using warpage driving force, resistance and neutral axis, for typical die embedded substrate, where the discrete active dies are placed in the core of substrate and interconnected to the substrate by direct Cu bonding. The same principles are applicable in other device embedded substrates. Even though the detailed structure of other device embedded substrates might be different, the origin and determination of the parameters of warpage are the same and thus the purpose of this report is to help engineers improve the warpage behaviours of their products by applying this principle.About IECThe IEC is a global, not-for-profit membership organization, whose work underpins quality infrastructure and international trade in electrical and electronic goods. The IEC facilitates technical innovation, affordable infrastructure development, efficient and sustainable energy access, smart urbanization and transportation systems, climate change mitigation, and increases the safety of people and the environment.
The IEC brings together ~170 countries and provides a global, neutral and independent standardization and conformity assessment platform for 30 000 experts globally. It administers 4 Conformity assessment systems whose members certify that devices, systems, installations, services and people work as required.
The IEC publishes around 10 000 IEC International Standards which together with conformity assessment provide the technical framework that allows governments to build national quality infrastructure and companies of all sizes to buy and sell consistently safe and reliable products in most countries of the world. IEC International Standards serve as the basis for risk and quality management and are used in testing and certification to verify that manufacturer promises are kept. |
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